| 摘要 |
PURPOSE:To provide a semiconductor memory capable of writing, which has a short manufacturing time and a high degree of integration, by using radiation of an energy beam such as a laser beam or the like in order to write-in informations. CONSTITUTION:A linear buried electrode 12 becoming a line of matrix and an external region 13 at a crossing of matrix are formed on an N type silicon single crystalline substrate 11 by diffusing P type impurities. Then, an N type region 15 is formed in a P type layer 13 and an opening is formed in an SiO2 layer between the P type region 12 and an N-P type double layer region in order to form a polycrystalline silicon layer 16 doped into P type. Next, a metal electrode 18 connected to a P type region 15 of the N-P type double diffused layer is formed and a bonding pad 17 is formed. Writing-in of informations is carried out by applying a laser beam to the P type polycrystalline silicon layer 16, diffusing P type impurities in a single crystal, and connecting the P type buried electrode 12 and the P type region 15 through the P type diffused layer. |
