| 摘要 |
PURPOSE:To increase the inverting time of a cell without impairing the high-speed reading action, by setting the gain band width of the 1st emitter forming a multi- emitter memory cell lower than that of the 2nd emitter. CONSTITUTION:A multi-emitter memory cell consists of an emitter E formed by P type base region which is formed on N type collector region 11 by the diffusion of two times and an emitter E' formed by a base region 13 having a deep collector- base junction with higher density than a region 12. In such constitution, the gain band width of the holding emitter E' is lower than that of the emitter E for information. As a result, the inverting time of the memory cell is increased to prevent the inversion of information caused by the external noise. Thus the memory cell has a high resistance to the external noise without impairing the high-speed reading action. |
