| 摘要 |
PURPOSE:To increase the accuracy of a chemically etching device by performing the steps of conveying a wafer and etching it by etchant injection in two steps, optically detecting the completing point in the latter step to control the injection and conveying speed, and enabling the control of the etching time responsive to the thickness. CONSTITUTION:A substrate 1 is fed at a constant speed via a round belt 25 by a container 2A to a treatment chamber C, etchant is injected from the first nozzle 28, and the substrate is roughly etched. Then, the substrate 1 is transferred to the second belt 26, is thus fed, is then stopped at the position of a nozzle 29, and etchant is injected. When aluminum film, for example, formed on the substrate 1 is completely etched, the light from a projector 30 is detected by a photodetector 31, the injection of the nozzle 29 is stopped by the signal, and the belt 26 is simultaneously quick fed, and the substrate 1 is transferred onto the belt 27 in a cleaning chamber D. Subsequently, the substrate 1 is washed, is then dried in a drying chamber E, and is contained in a container 2B of treated substrates. Thus, the etching can be accurately performed without decreasing the treating capacity. |
