| 摘要 |
PURPOSE:To facilitate the formation of an electrode wiring layer by forming the second metallic film readily bromided with Ti or the like on an aluminum layer, selectively etching the second metallic film with bromine gas plasma and removing the aluminum layer with chlorine gas plasma. CONSTITUTION:A hole is opened at the oxidized film 2 on the surface of a substrate 1 formed with an active region 4 to expose the region 4, and aluminum film 3 is formed on the overall surface. A Ti film 5 (or Nb, Ta, Au, Mo bromide is readily formed as a metallic layer) is, for example, formed thinly consecutively onto the film 3. With the resist pattern 5 as a mask it is etched with plasma with Br2 gas to etch the film 5, and then the film 3 is etched with plasma with CCl4 gas of diluted Ar. Thus, it can prevent the formation of alumina on the film 3, thereby facilitating the formation of aluminum electrode wire by plasma etching. |
