| 摘要 |
PURPOSE:To eliminate the introduction of O to a boundary of a titanium/ aluminum-titanium alloy film formed on a semiconductor to be stable at heat treatment and to obviate a deterioration due to an electromigration by composing electrodes of the alloy film. CONSTITUTION:Electrodes are formed of Ti (e.g., Ti film 6A)/Al-Ti alloy (e.g., Al-Ti alloy film 6B) film formed on a semiconductor (e.g., an n-type GaAs active layer 3). A Ti layer 6A for forming a Schottky boundary in a gate electrode 6 is diffused in the layer 3 by heat treating after forming, and a Schottky barrier is generated in the boundary. Accordingly, the electrode 6 of a preferable Schottky contact is preferably formed without influence of a natural oxide film presented on the layer 3 before the formation of the layer 6A. The component of Ti in the film 6B is suitably selected in a range of 0.1-10(%). Even if a current flows to the aluminum electrode containing Ti, an electromigration effect scarcely occurs. |
