| 发明名称 |
CONTACTS TO SHALLOW P-N JUNCTIONS |
| 摘要 |
<p>CONTACTS TO SHALLOW P-N JUNCTIONS Deep penetration spikes, when a fused metal contact is made to semiconductor material, can be avoided by converting a portion of exposed crystalline semiconductor material to a layer of amorphous semiconductor material. The converted portion is the volume of the semiconductor material required to saturate the metal during a post-metallization annealing step. Y0978-004</p> |
| 申请公布号 |
CA1120607(A) |
申请公布日期 |
1982.03.23 |
| 申请号 |
CA19790337494 |
申请日期 |
1979.10.12 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CROWDER, BILLY L. |
| 分类号 |
H01L21/28;H01L21/265;H01L21/285;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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