| 摘要 |
PURPOSE:To eliminate the occurrence of a crystalline defect of a semiconductor by sealing in vacuum an element having the same vapor pressure as component elements of compound semiconductor material to be treated having high vapor pressure and always disposing the element in the high moisture part higher than the material, thereby suppressing the dissociation of the component elements from the surface of the material. CONSTITUTION:A quartz ampule 4a is inserted into a quartz tube forming a diffusion furnace with one end C side disposed at the interior and with the other end D side disposed at the beforehand. when GaAs 5 to be treated and an impurity source Zn 6 to be diffused are sealed in vacuum in the ampule 4a, GaAs 5 and Zn 6 are additionally added further to the one end C disposed at the interior of the quartz tube and at one end D of the open end of the quartz tube, and As 7 is disposed at the interior of the GaAs 5. When the ampule 4a is inserted into the quartz tube in this manner, the As 7 us heated to the temperature higher than the temperature GaAs 5 rapidly, the As 7 is thus evaporated before the As is dissociated and evaporated from the GaAs 5, thereby suppressing the dissociation of the As from the GaAs 5. |
