| 摘要 |
PURPOSE:To shorten a required time for drawing and to obtain a high-precision mask by applying resist after forming a large-area light-shielding film in a prescribed pattern by selectively removing the thin light-shielding film formed on a substrate, and by forming the fine pattern with an electron beam. CONSTITUTION:After a thin light-shielding film 7 formed on a Cr film, etc., on a glass substrate 1 is coated with resist, a pattern generator or elctron-beam exposure device having a high drawing speed is used to draw a large pattern 3 and an L- shaped pattern 4 for positioning, and development, etching and resist removal are performed to form the 1st mask pattern 3. Further, the substrate 1 is coated with new resist and an electron beam exposure device having high resolution is used to scan the L-shaped pattern 4 with an electron beam; while positoning 5 is performed, a fine pattern is drawn. Then, etching and resist removal are carried out to form a fine pattern part 6. Thus, the total drawing time is shortened and the submicron pattern 6 is formed with high precision. |
