| 摘要 |
PURPOSE:To obtain a device of high reliability by a method wherein an insulating film built on a region except an electrode connecting region is constructed using a laminated structure which consists of an oxide film of a semiconductor and an insulating film which is attached from outside. CONSTITUTION:An insulating film 5 built on a regin except an electrode 6, 7 is built using a laminated structure which consists of an oxide film 11 of a semiconductor and an insulating film 12 which is attached from outside. For example after a buffer layer 2, an active layer 3 and a top layer 4 is built on a PbTe substrae 1 mesa etching is applied. Next after an anodized oxide film 11 is formed an insulating film 12 consisting of MgF2 is attached. Using a photo resist film as a mask the anodized oxide film 11 on a region on which an electrode film is to be attached and the insulating film 12 are etched. Electrode films 6, 7 are formed at the end of the process. By this arrangement a device of high reliability is obtained. |
