SEMICONDUCTOR ELEMENT AND METHOD OF PRODUCING SAME

摘要

The present invention is directed to a process for producing a glass passivated semiconductor device and to the device so produced. The process comprises forming at least one region having a second type of conductivity in a large area body of semiconductor material having a first type of conductivity, forming grooves (40, 42) through top and bottom surfaces (12, 14) of the large area body whereby a plurality of smaller area bodies are defined. The grooves (40, 42) are filled with a glass paste which is solidified in situ and the smaller bodies are cut from the larger body with a laser scribe. Each smaller body cut from the larger body includes the glass filled groove which defined it originally. Electrodes are then affixed to each of the smaller bodies thereby providing a semiconductor device.