| 摘要 |
PURPOSE:To obtain a semi-aumorphous semiconductor film which is suitable for a high-efficiency photoelectric transducer, by a method wherein slab-like lump clusters which consist of Si Ge or compound of them are piled and accumulated alternatively so as to form a film structure. CONSTITUTION:A reactive gas such as silane is introduced into a reaction chamber and the gas is activated by induction energy. A plurality of activated cluters 18 which consist of Si (or Ge) are agnerated by condensation and are piled on a conductive substrate or an insulating substrate 17 so that they form a film. With the above method, the accumulated film becomes a semi-amorphous semiconductor which has intermediate properties inbetween a crystalline semiconductor and an amorphous semiconductor and is suitable for a high-efficiency photoelectric transducer. |
