| 摘要 |
PURPOSE:To make temperature characteristics better and manufacture facile by a method wherein a ferromagnetic material is used as a magneto resistive segment and it is organized as a thin film. CONSTITUTION:An insulating film 12 consisting of silicon dioxide is formed through heating a surface of a silicon wafer to a high temperature and feeding oxygen. After a thin film is built by evaporation of a ferromagnetic material (such as Ni-Co alloy or Fe-Ni alloy etc.) on it, a chip 14 is built by forming a necessary pattern 13. The chip 14 is attached on an insulating substrate 15. Electrodes 16-18 are prepared previously using metalization on the insulating substrate 15, and each tip of the magneto resistive segments 13 on the chip 14 and connecting points are connected by wire bonding. |
