| 摘要 |
PURPOSE:To form a minute 2n doubling pattern, by a method wherein an original pattern with a vertical edge is provided on a substrate by photoetching to form SiO2 film patterns on both sides of the original pattern followed by removing the original pattern to form doubly-increasing patterns for repeating the same process. CONSTITUTION:A resist pattern 2 is formed on an Si substrate 1. An original pattern 3 is provided by performing etching to make an edge vertical to the surface of the substrate. Said substrate is thermally oxidized for covering the surface with an SiO2 film 4. An anisotropic etching is performed to the SiO2 film 4 so much as to correspond to the thickness of the SiO2 film only in the verical direction to the surface of the substrate thus leaving the SiO2 film only on the surface of the original pattern 5. Resist 7 is applied and the resist is removed until the original pattern 5 and the surface of the remaining SiO2 film 6 are exposed followed by removing the original pattern 5 to obtain the SiO2 film pattern 6 doubling the original pattern. In the same way the pattern is increased repeatedly, whereby enabling to form a minute pattern with no technical burden. |
