| 摘要 |
PURPOSE:To obtain a semiconductor device having humidity resistance, which is excellent in structure and quality, by using a double protecting film. CONSTITUTION:After a channel stopper is formed on a silicon substrate 11 by diffusion, a field oxide film 12 is formed. Then, impurity diffusion or the like is carried out to form the device, and an intermediate insulating film 15 is formed thereafter. Then, wiring and a bonding pad 16 are formed by evaporation of Al. Thereafter, a low-concentration PSG film 17 is deposited as the first protecting film so as to cover the ends of the intermediate insulating film 15 and the field oxide film 12 besides the device pattern and moreover a part of the silicon substrate 11. Then, as the second protecting film, a plasma nitride film 19 is piled on the low-concentration PSG film 17 so as to cover the edge part thereof. Thereby, moisture is prevented from entering through the intermediate insulating film 15 or the opening part. |
