| 摘要 |
PURPOSE:To enhance reliability of element of a semiconductor device by a method whrein a polycrystalline silicon thin film is converted into an oxide film by thermal oxidation. CONSTITUTION:After pattern formation of the polycrystalline silicon film 3 is performed, a still thinner (100-1000Angstrom ) polycrystalline silicon film 8 is made to grow, and an oxide film 4 is made to grow thereon by vapor growth. By this constitution, even when photo etching for diffusion is performed after then, because the polycrystalline silicon film 3 is not violated by an etching liquid and act as an etching stopper, the end part of the polycrystalline film is not violated perfectly. The second polycrystalline silicon film 8 is converted into an oxide film 9 by thermal oxidation, and moreover the second field region is made to grow by CVD. After then Al is evaporated, and photoetching of Al is performed to complete wiring. |
