| 发明名称 |
BAND GAP OF AMORPHOUS ALLOYS AND DEVICES |
| 摘要 |
A graded bandgap material comprises amorphous Si containing F(a- Si : F) together with a varying amount of a bandgap modifier (e.g. Ge, Sn, C or N). H, may also be incorporated in the material which may be doped. The graded bandgap material may be used in Schottky, MIS and PIN solar cells or in photoconductive or electrophotographic devices. |
| 申请公布号 |
AU7501981(A) |
申请公布日期 |
1982.03.18 |
| 申请号 |
AU19810075019 |
申请日期 |
1981.09.08 |
| 申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
STANFORD ROBERT OVSHINSKY;DAVID ADLER |
| 分类号 |
H01L31/04;C23C14/00;C23C14/06;C23C14/32;C23C16/22;C23C16/44;C23C16/455;H01L29/16;H01L31/20 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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