发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUITS
摘要 A semiconductor integrated circuit is manufactured by forming a plurality of circuit elements in a semiconductor substrate, covering the circuit elements with an insulating film except exposed portions thereof, forming a first conductive path on the insulating film, at least a portion of the first conductive path overlaying predetermined portions of the circuit elements and electrically connected therewith, applying a second insulating film on the first conductive path, forming a second conductive path to overlay the first conductive path and applying a breakdown voltage across the first and second conductive paths to breakdown the second insulating film interposed therebetween via a circuit element, thus electrically interconnecting the first and second conductive paths.
申请公布号 US3634929(A) 申请公布日期 1972.01.18
申请号 USD3634929 申请日期 1969.10.29
申请人 TOKYO SHIBAURA ELECTRIC CO. LTD. 发明人 KENJI YOSHIDA;OSAMU ICHIKAWA
分类号 G11C17/16;H01L23/29;H01L23/525;H01L27/102;(IPC1-7):B01J17/00;H01L1/16 主分类号 G11C17/16
代理机构 代理人
主权项
地址