| 发明名称 |
METHOD FOR FABRICATING A BIPOLAR TRANSISTOR HAVING A POLYSILICON BASE CONTACT AND A POLYSILICON OR METAL EMITTER CONTACT |
| 摘要 |
<p>A method consisting of a sequence of process steps for fabricating a bipolar transistor having base contacts formed of polysilicon material and an emitter contact formed of polysilicon material or metal. The emitter contact is self-aligned to the base contacts by the use of process steps wherein a single mask aperture is used for defining the base contacts and the emitter.</p> |
| 申请公布号 |
EP0005721(B1) |
申请公布日期 |
1982.03.17 |
| 申请号 |
EP19790101221 |
申请日期 |
1979.04.23 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NING, TAK HUNG;YU, HWA NIEN |
| 分类号 |
H01L29/73;H01L21/033;H01L21/225;H01L21/285;H01L21/331;(IPC1-7):01L21/60;01L23/48;01L21/285;01L29/62;01L29/54 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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