| 摘要 |
PURPOSE:To stereoscopically form a resistance layer on an electrode forming region without damaging a diffused layer by emitting a laser to a polysilicon grown at a low temperature on the electrode window of a semiconductor substrate finished with diffusing step to single-crystallizing it. CONSTITUTION:A p type layer 3 and an n<+> type layer 2 are formed on an n type epitaxial layer 4 isolated with a p<+> type layer, A window is selectively opened at an SiO2 film 5, and polysilicon 6 and an SiO2 film 7 are laminated. A window is selectively opened at the SiO2 film 7, a doped polysilicon 9 is superposed thereon, and a laser beam is emitted to the electrode arranging region 9' to convert the polysilicon into a single-crystalline Si. It is then photographically etched to form a resistance layer 10 on the electrode window, is then etched with fluoric acid to selectively retain an annular SiO27'. Then, aluminum electrode and wire 11 are formed, and a PSG12 is covered. With this configuration desired conductive type and desired resistance value resistance can be stereoscopically formed on the desired electrode, but it does not occupy the surface area of the substrate nor disturb the function of the difused layer thus completely formed. |
