| 摘要 |
1,264,288. Semi-conductor integrated circuits. RCA CORPORATION. 7 Sept., 1970 [17 Sept., 1969], No. 42706/70. Heading H1K. An integrated circuit comprises (Figs. 1, 2) a substrate 12 of first type e.g. P conductivity overlain by epitaxial layer of second type conductivity having surface 14; an isolation layer 16 of first type e.g. P conductivity being diffused through portions of the epitaxial layer to divide it into zones 18, 20 of second e.g. N- type conductivity separated by isolating PN junctions. Zone 18 includes a device for isolation e.g. a NPN transistor 21 whose collector is part of zone 18, base is a region 22 of 1st type conductivity, and emitter is a region 24 of 2nd type condutivity; an insulant layer 26 being deposited on the epitaxial surface and selectively removed to open portions of regions 18, 22, 24 after which a conductive layer of e.g. aluminium is deposited and selectively removed to leave interconnecting leads 28, 30, 32. A bonding pad 34 is vacuum deposited on layer 26 and connected to region 22 by metalized lead 32; the lead and pad being disposed over the area of zone 18. An inversion channel 36 of P-type conductivity will form in zone 18 under the lead and bonding pad at approx. 20 v.p.d. to intersect and extend P-type region 22, but since the lead and path are disposed on insulant layer 26 within the area of zone 18, the channel cannot connect region 22 with isolation region 16 and so short the transistor. Similarly (Fig. 3) zone 20 includes resistor 38 by diffusion of a 1st type region into part of zone 20 from surface 4, and part of the insulant layer 26 is removed to expose the resistor, which is connected over lead 42 to bonding pad 40 both disposed on the insulant layer. Z arc 20 is extended at 20b, 20c to include the lead and pad, and thus prevent shorting from the resistor to the substrate by the formation of an inversion channel 44. |
