| 摘要 |
PURPOSE:To enable to form an insulating film having preferable boundary state between the film and an operation layer by employing a high impurity-containing epitaxially grown semiconductor layer on source and drain regions. CONSTITUTION:An N<+> type GaAs epitaxial layer 17 is formed on a semiinsulating GaAs substrate 16, and a striped groove 18 having V-shaped section reaching the substrate 16 is formed through the layer 17. A P<-> type GaAs epitaxial layer 19 is bufied in the groove 18, and a gate electrode 21 is formed via an insulating film 20 on the layer 19. Source and drain electrodes 22 and 23 are formed on the layer 17 with the electrode 21 disposed therebetween. Since the heat treatment can be eliminated in the manufacturing step in this manner, the surface of the layer 19 to become an operation layer is not thermally deteriorated. Since the element surface is further flat, an aluminum anodic oxidation or spinner method can be adopted to form the gate insulating film. Since the surface of the element is moreover flat, high microminiaturization can be facilitated. |
