| 摘要 |
PURPOSE:To prevent the occurrence of a crystalline defect in a wafer by employing a material having large thermal capacity and standing jigs for maintaining the predetermined interval between the material and the wafers, and heat treating the wafer. CONSTITUTION:A thick jig 2 is formed of a material having relatively large thermal capacity, e.g., quartz, SiC or the like, and standing jigs 7 are engaged at the lower edges with the slits 6 on the upper surface of the jig 2. The jigs 7 are formed also of quartz, SiC or the like, and are square thick plates slightly larger than the wafer 1. A spherical recess 8 of the diameter approximately equal to the diameter of the wafer is formed on one side surface of the jig 7, hooks 9 are provided at upper and lower, right and left sides of the periphery of the recess, and the wafer 1 is thus engaged. Thus, the gap e between the surface of the wafer 1 and the jig 7 becomes gradually large toward the center from the periphery. In this manner, the periphery and the center of the wafer are heat at approximately equal temperature, and when the wafer is removed of a reaction tube, the periphery of the wafer is suppressed in cooling by the residual heat, thereby equalizing the temperature difference between the periphery and the center of the wafer. Thus, the thermal stress is not concentrated to the periphery, and no crystalline defect is produced. |
