发明名称 |
Method of producing semiconductor displacement transducer |
摘要 |
A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.
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申请公布号 |
US4319397(A) |
申请公布日期 |
1982.03.16 |
申请号 |
US19800165985 |
申请日期 |
1980.07.07 |
申请人 |
HITACHI, LTD. |
发明人 |
TANABE, MASANORI;SHIMADA, SATOSHI;YASUKAWA, AKIO;NEMOTO, HIDEYUKI;NISHIHARA, MOTOHISA;TSUCHIYA, MASATOSHI;SOENO, KO |
分类号 |
G01D5/16;H01L29/84;(IPC1-7):H01L21/58 |
主分类号 |
G01D5/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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