| 摘要 |
PURPOSE:To prevent the decrease in gain in an amplifier circuit and to stabilize the operation, by extremely reducing high frequency impedance in a high frequency band. CONSTITUTION:A metal layer 11 at a circuit grounding pad part, a metal layer 12 at the peripheral part of the main surface of a pellet and a metal layer 13 at a dicing line part are electrically connected one another and formed as a unitary body. A part of a conductor layer 14 is deposited on the metal layer parts including, e.g. the metal layer 13 at the dicing line part and the metal layer 12 at the peripheral part of the main surface of the pellet. The conductor layer 14 is formed by applying a conductive bonding agent. The other end of the conductor layer 14 is deposited on an element bed part 102, on which a semiconductor pellet is arranged, and grounded. The upper surface of a semiconductor pellet 10 is covered with a surface protecting film 106, e.g., Si3N4, other than at least a part of the metal layer 12 at the peripheral part of the main surface of the pellet and the metal layer 13 at the dicing line part. The surface protecting film 106 is not applied to the parts of the metal layers 12 and 13, where the conductor layer 14 is to be deposited when the pellet is formed, and the metal layers are exposed. Thus the metal layer 11 at the circuit grounding pad part and element bed part 102 are connected, with high frequency impedance as zero, as shown in the equivalent circuit in the Figure. |
