发明名称 |
MONOLITHIC SEMICONDUCTOR MEMORY |
摘要 |
This specification discloses a storage cell which employs inversely operated and transverse transistors to reduce storage cell size accessing times and power consumption when the cell is fabricated in monolithic form. Two cross-connected transistors are inversely operated so that they share a common emitter region with a separate base region and collector region for each of the cross-connected transistors. In this way, the transistors can be fabricated in a single diffusion region. The collector of each of the cross-connected transistors is connected to the collector of a load transistor of the opposite type transistor and to the base of an addressing transistor having its emitter connected to the sense line and its collector connected to the base of the load transistors. The two addressing and load transistors are formed in a single isolation zone with collector and base regions of the addressing transistors serving also as the base and collector regions respectively of the load transistors which are fabricated as transverse transistors with a common emitter region.
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申请公布号 |
US3643235(A) |
申请公布日期 |
1972.02.15 |
申请号 |
USD3643235 |
申请日期 |
1969.12.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
HORST H. BERGER;SIGFRIED K. WIEDMANN |
分类号 |
G11C11/411;G11C15/00;H01L21/00;H01L27/00;H01L27/07;H01L27/082;H01L27/10;H01L27/102;H03K3/286;H03K3/288;H03K3/35;(IPC1-7):G11C11/40;H03K3/28 |
主分类号 |
G11C11/411 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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