发明名称 |
Method of making self-aligned device |
摘要 |
A self-aligned MOS transistor having improved operating characteristics and higher packing density and a method for fabricating the device. Resistance of the gate electrode is reduced substantially by forming the electrode of a metal silicide. Resistance of the source and drain regions is likewise reduced substantially by forming a metal silicide in the doped junction region which allows those regions to be smaller and to require less area. The silicided source and drain regions are self-aligned with and closely spaced to the silicided gate electrode. This is provided by a process which utilizes and makes possible an undercut etching of a polycrystalline silicon gate electrode.
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申请公布号 |
US4319395(A) |
申请公布日期 |
1982.03.16 |
申请号 |
US19790053132 |
申请日期 |
1979.06.28 |
申请人 |
MOTOROLA, INC. |
发明人 |
LUND, CLARENCE A.;BARRON, EDWARD W.;HOLSTIN, HOWARD E.;SUGINO, MICHAEL D. |
分类号 |
H01L21/033;H01L21/336;H01L29/45;H01L29/49;H01L29/78;(IPC1-7):H01L21/30;H01L21/44 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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