METHOD OF PRODUCING INTEGRATED CIRCUIT

摘要

The package has at least two levels of conductive interconnected patterns (26, 50A, 50B). The insulation containing the metal filled via openings (36) between the different levels consists of a lower layer (30) of an electrically insulating organic polymer end an overlying oxygen plasma resistant inorganic insulating layer (23). <??>In the formation of the interconnection metallurgy inorganic insulating layer (23) prohibits overetching in producing the hole pattern in the organic insulating layer (42) laterally surrounding the conductive pattern (50A, 50B) in the next level. The entirety of the insulation between the levels is thus ensured.