| 摘要 |
PURPOSE:To prevent the occurence of crack by performing the sputtering under such condition as the quartz, borosilicate glass, etc. is employed as the evaporation source and where the energy the of particle is higher than 1eV while maintaining the temperature of the surface of the substrate higher than 150 deg.C thus forming an overcoat layer. CONSTITUTION:A yellow stripe Y and a cyan stripe C are formed through the etching on a transparent substrate 21. Then said substrate 21 is mounted on an RF magnetron sputtering device having a target of silicon dioxide and to evacuate upto 1X10<-6> Torr. Thereafter the temperature of the substrate 21 is heated to 150 deg.C by means of an iodine lamp and the argon gas is supplied upto 3X10<-3> Torr. Then while rotating the specimen holder, the voltage is applied on the target to ionize the argon thus to regulate the output to 1.5KW and to form the overcoat layer 23 of silicon dioxide. Thereafter a transparent electrode 24 and a photoconductive film 25 are formed. Consequently a overcoat not subjected to the crack can be formed. |
