| 摘要 |
PURPOSE:To make manufacturing of a high grade integrated circuit easy, by supplying the prescribed potential to be written into a dummy cell in the stand-by mode through an optional word line within a memory. CONSTITUTION:The source, the drain, and the gate of a dummy cell reading transistor (TR) 1 are connected to a bit line 6, a capacitor 3, and a word line 7 of a dummy cell, respectively. Then the source of a writing TR2 are connected to a point 4 of the connection between the TR1 and the capacitor 3, and the drain is connected to an optional word line, e.g., the line 7 corresponding to said dummy cell, and the gate is connected to a write signal line 8 respectively. |
