| 发明名称 |
Method of forming polycrystalline silicon lines and vias on a silicon substrate |
| 摘要 |
The method involves the formation of conductive, polycrystalline silicon lines and vias by the conversion of amorphous silicon in contact with the underlying silicon substrate through the use of a laser annealing process.
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| 申请公布号 |
US4319954(A) |
申请公布日期 |
1982.03.16 |
| 申请号 |
US19810238804 |
申请日期 |
1981.02.27 |
| 申请人 |
RCA CORPORATION |
发明人 |
WHITE, LAWRENCE K.;WU, CHUNG P. |
| 分类号 |
H01L21/268;H01L21/285;H01L21/3213;H01L21/768;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/268 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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