发明名称 HIGH-SPEED TURN-OFF CIRCUIT FOR SEMICONDUCTOR SWITCH ELEMENT
摘要 PURPOSE:To reduce the turn-on time, by obtaining a driving current through the use of charge/discharge energy in a surge absorbing circuit at turn-off, in the absorption of semiconductor switching having a surge absorbing circuit. CONSTITUTION:When a base current supplies to transistors 1, 8 from a driving pulse source 3, a transistor (TR)1 starts flowing a main circuit current ic, a TR8 discharges the electric charging charge of a capacitor 6 to the base of the TR1 to make the TR1 further conductive. When discharge is started from the capacitor 6 and the voltage decreases until the TR8 turns off, the base current of the TR1 is supplied from the pulse source only to reduce the turn-on time. Next, when the supply from the pulse source is stopped, the TRs 1, 8 are turned off, and a current flowing to the TR1 is by-passed via a diode 5 and the capacitor 6 and the capacitor 6 is charged up to be kept until the next turn-off.
申请公布号 JPS5745722(A) 申请公布日期 1982.03.15
申请号 JP19800120840 申请日期 1980.09.01
申请人 ORIGIN DENKI KK 发明人 WATANABE KIYOMI
分类号 H03K17/04;H03K17/042 主分类号 H03K17/04
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