发明名称 FORMING METHOD FOR PATTERN
摘要 PURPOSE:To minimize a proximity effect of electron beams, and to obtain the minute pattern by exposing a large area section and a bridge section by the slightly small amount of irradiation and exposing both sides of the bridge through thin beams by the slightly large amount of irradiation. CONSTITUTION:The large area section and the bridge section are exposed by the amount of irradiation 42 slightly less than the proper amount of irradiation, and both sides of the bridge are doubly exposed through thin beams by the amount of irradiation 41 slightly more than the proper amount of irradiation. The resist pattern 2 with the bridge section 10 according to the design is formed because the electron beams are reflected by a substrate 3 and are more than the proper amount of irradiation.
申请公布号 JPS5745261(A) 申请公布日期 1982.03.15
申请号 JP19800120512 申请日期 1980.08.29
申请人 MITSUBISHI DENKI KK 发明人 KATOU TADAO;SAEKI HIDEO;SAITOU KAZUNORI
分类号 H01L21/3205;H01J37/317 主分类号 H01L21/3205
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