| 摘要 |
PURPOSE:To enable a sufficient clamp effect of a Schottky barrier diode SBD by reducing the thickness between it and a buried layer to form the SBD at a part of a collector in a transistor with the SBD. CONSTITUTION:An n<+> type buried layer 2, an n type epitaxial layer 3 to be a collector region, a p type diffused layer 10 to be a base region and an n type emitter resion 11 are provided on a p type silicon substrate 1. An epitaxial layer 3a intended for the formation of a schottky barrier diode (SBD) is made less than the portion intended for the formation of a transistor Tr in the thickness between it and a lower buried layer 2 by sinking it from the surface side. |
