| 摘要 |
PURPOSE:To join a Si base body and a Cu-C composite electrode in solid phases without generating a void by a method wherein the Cu-C supporting electrode to which a Cu film is formed and the Si base body to which an Al film is shaped are stacked and held, heated at a temperature lower than an eutectic temperature and joined in solid phases. CONSTITUTION:The Cu-C supporting electrodes 10, 18 are coated with Ni 11, 17, surface-treated, and plated with Cu films 12, 16 through an electrolytic plating method. The adhesive property of the Cu films to the supporting electrodes is strengthened through heat treatment. On the other hand, Al 13, 15 is evaporated onto the Si base body 14, and adhesive property is improved through heat treatment and cooling. These supporting electrodes and Si base body are heated and held for 20min at 500 deg.C in vacuum by using a jig, and bonded in solid phases. Accordingly, the semiconductor device joined in solid phases by low-heat resistance can be obtained without generating voids at joined sections. |
