| 摘要 |
PURPOSE:To improve wetproof property, to decrease the generation of a thermal crack and to ameliorate reliability by using a growth gas, the rate of phosphine (PH3) therein is extremely low, in a chemical gaseous phase growth method for phosphorous silicate glass. CONSTITUTION:Oxygen is supplied from the gas introducing nozzles 4, 4' of a decompression CVD device as the growth gas, and a mixed gas of mono-silane (SiH4) and phosphine (PH3) is flowed in from a gas introducing pipe 6. The rate of phosphite in the growth gas is made a 8% or lower molar ratio to the total of mono- silane and phosphite. Accordingly, the PSG film, which is excellent in wetproof property and generates few cracks in annealing treatment, is formed. |
