发明名称 SEALING AND FITTING STRUCTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent a short circuit between electrodes due to a solder bump by forming an insulating oxide film on an exterior surface of a cap consisting of a metallic material sealed and fitted to a chip carrier with glass with the low melting point. CONSTITUTION:With the chip carrier 1 consisting of the laminates of a ceramic board material, a concave section 2 is shaped at the central section, and a semiconductor element 3 is joined. An electrode of the semiconductor element 3 is connected to electrode patterns through gold wires 4. The concave section 2 is covered with the cap 5 in a Kovar or iron-nickel alloy having an approximately same thermal expansion coefficient as ceramic, and hermetically sealed with the frit group low melting point sealing and fitting glass 6 having the approximarely same thermal expansion coefficient as ceramic. An aluminum clad layer 9 composed of an aluminum thin-film is shaped onto a lower surface of the cap 5, oxidized in a heat treatment process such as sealing and fitting, and changed into the insulating oxide film.
申请公布号 JPS5745262(A) 申请公布日期 1982.03.15
申请号 JP19800119843 申请日期 1980.09.01
申请人 FUJITSU KK 发明人 HAMANO TOSHIO;AKASAKI HIDEHIKO
分类号 H01L23/12;H01L23/10 主分类号 H01L23/12
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