| 摘要 |
PURPOSE:To obtain deposited films of desired characteristics and good quality efficiently at high speeds by specifying the elecrtic fields between the 1st, 2nd electrodes and the 3rd electrode near the latter between the same in forming deposited films by cracking gaseous starting material through electric discharging. CONSTITUTION:For example, in formation of an a-Si:H film, a substrate 105 with its cleans surface on the 1st electrode side is placed on the 2nd electrode 106. Next, the inside of a depositing chamber 101 is evacuated to prescribed pressure, after which a gaseous silane, a doping gas or the like is supplied into the chaber 101 by prescribed pressure, whereby glow electric discharge is induced. At this time, certain constant voltage is also beforehand applied to the 3rd electrode 108 having multiple through-holes 109. This voltage can control the rate of formation of the deposited film to be formed on the substrate 105, and the latter out of the elctric fields formed between the electrodes 104 and 108 and between 106 and 108 is made relatively weak. Then, power lines are as shown in the dotted lines of the figure, and the cations in the plasma formed by the electric discharge move positively in the substrate 105 direction. Also, the film damage owing to ion impingement is mostly avoided. |
