| 摘要 |
PURPOSE:To improve the gate sensitivity by cutting most of reactive current with a mesa structure. CONSTITUTION:A first p type region 2 and a second p type region 3 are formed on an n type semiconductor substrate 1. A second n type rgion 4 is formed on a part of the surface of the region 3, a third n type region 5 on a part of the surface of the region 2 not facing the region 4 and a fourth n type 6 on a part of the surface of th region 3 facing the region 5 and near the region 4. Mesa grooves 12 and 14 are provided as attaining the region 1 from both the main surface sides, and covered with insulators 13 and 15 such as glass respectively. |
