| 摘要 |
A method of producing integrated semiconductor circuits, on electrically insulated foreign substrates, whereby the connection between the semiconductor material and the foreign substrate is effected through an epitactic growth process. The semiconductor crystal wafer, which is provided for the subsequently produced circuit, is used as the original substrate body for an epitactic coating, and the insulating layer, which defines the foreign substrate, is epitactically deposited thereupon.
|
