| 摘要 |
A method of producing a III-V semiconductor compound in which one of the elements is placed in a porous container within a reaction vessel and brought into a liquid state while the other element, also present in the reaction vessel, is volatilized and diffuses into the liquid element. The surface of the liquid element is covered with a layer of boron oxide to prevent contamination of the semiconductor compound by the material of the reaction vessel, e.g., silicon dioxide.
|
