| 摘要 |
PURPOSE:To protect a substrate made up of multiple semiconductors from inadvertent changes of te surface condition by providing a thin layer on the surface thereof in the same conductivity type as that of the substrate and at a high impurity concentration so that a conductive layer to make an electrode at a specific point thereon. CONSTITUTION:A substrate 1 of a infrared ray detecting element D securely placed on a support plate S made of an insulator, for example sapphire is made of an N type Hg1-xCdxTe as a thin film about 10mum thick. An donner ion, for example, ion of B, In and Hg is implanted into the surface layer of the substrate 1 to form an N<+> type thin layer (an implanted layer) 2. Electrodes 3 and 4 made of a low melting point metal, for example, In are formed thereon and a film 5 is formed on the photo detector surface thereof by evaporating zinc sulfide for the purpose both to protect the surface and prevent the surface reflection. |
