| 摘要 |
PURPOSE:To reduce the warp of wafer of a semiconductor device by a method wherein on the back of a semiconductor substrate being formed with plural circuit elements on one main face, oxide films, nitride films, etc., are remained partially. CONSTITUTION:The oxide films 22, 23 are formed on both the main faces of the Si substrate 21, and after the plural circuit elements are formed on the film 22 side of the substrate, the oxide film 23 on the back side is removed partially as occasion demands. Accordingly thermal expansion coefficients at the corresponding respective parts on the main face and the back face are equalized, the warp of the semiconductor substrate can be prevented more effectively, and characteristic thereof can be enhanced when it is used for a solid color imaging element, etc. |
