| 摘要 |
PURPOSE:To obtain the desired pattern of excellent accuracy by a method wherein a sputter-etching is performed after a semiconductor substrate has been fixed by pressing on a substrate placing plate. CONSTITUTION:A sample placing plate 1 and an electrode 3 are provided in an airtight continger made of quartz, a concaved section to be used for burying the semiconductor substrate 2 is provided on the sample placing plate 1, the semiconductor substrate 2 is provided in the concaved section and the circumference of the substrate 2 is pressed by a thin plate made of stainless steel. Then, the container is evacuated, etching gas is introduced, high frequency voltage is applied in between the electrode 3 and the semiconductor substrate 2, and a sputter-etching is performed. Through these procedures, the rise in the substrate temperature generated while an etching is performed on the silicon oxide film on the substrate can be prevented, thereby enabling to perform a highly accurate etching without softening the photoresist film to be used as a mask. |
