| 摘要 |
<p>PURPOSE:To form an electrode having a low contact resistance for the subject semiconductor device by a method wherein a selected etching is performed successively on the high melting point metal film, provided on a semiconductor substrate, and an Al-Si alloyed film and a heating treatment is performed after a pattern has been formed. CONSTITUTION:After a Ti film 5 and the Al-Si alloyed film 6 have been successively coated on the P type Si substrate 1 having an N<+> layer 3 using a sputtering method or the like, the Al contained in he alloyed film 6 is removed (7 indicates Si particles) using an acid having phosphoric acid as a principal ingredient, the Si particles 7 and the Ti film 5 are selectively removed using a plasma etching of CF4 and the like, then a heat treatment is performed at the temperature of 450 deg.C for thirty minutes in dry N2 atmosphere, and an electrode is formed. Through these procedures, junction breakdown and an increase of leak current are prevented and an electrode having a low contact resistance can be formed.</p> |
