| 摘要 |
PURPOSE:To protect a semiconductor device completely from moisture by covering the atmosphere exposed part of a phosphorus silicate glass film formed on the substrate of the device. CONSTITUTION:A silicon oxidized film 2 and an aluminum electrode 3 are formed on a silicon substrate 1, and a phosphorus silicate film 4 is formed on the electrode except an electrode window 6 for insulation. Further, a moisture preventive film 5 including the side A is covered further on the film 4 to protect the film 4. Since phosphorus content contained in the film is in large quantity, the atmosphere exposed entire part of the film 4 having high hygroscopicity is thus covered with the moisture preventive film, thereby obtaining a semiconductor device having excellent durability time. |
