| 摘要 |
PURPOSE:To enable the erasure and rewriting of a stored content in a partial gate type non-volatile memory by forming the second gate electrode further on a silicon oxidized film. CONSTITUTION:Drain and source regions 25, 26 are formed at the predetermined interval in a semiconductor substrate 24, and a gate insulating film 22, the first gate electrode 33, an insulating film (silicon oxidized film) 27 and the second gate electrode 23 are laminated between the regions 25 and 26 on the substrate 24. In this case, the first gate electrode 33 is formed in an off-set structure so as to be superposed only on the other range partly retained of a channel region. Since an electric field 34 is formed directly between the remaining region of the channel region and a gate electrode 23 faced with the remaining region in this manner, in can accelerate the carrier injection efficiency from a pinch-off region 31, and the ON and OFF operations of a field effect transistor 21 can be effectively performed by controlling the electric field 34. |
