| 摘要 |
PURPOSE:To remove a fault when an electrode or the like is formed by dissolving and removing materials adhered on the surface of a compound semiconductor wafer made of material not corroded with hydrochloric acid or sulfuric acid with the hydrochloric acid or sulfuric acid. CONSTITUTION:Zinc is diffused in an antimonided indium wafer 1 to form a zinc diffused layer 4. The antimonided indium is not corroded with hydrochloric acid, and an insulating film 2 employs, for example, a material not corroded with hydrochloric acid. Accordingly, the wafer is dipped in the hydrochloric acid to treat the surface of the wafer and is lightly stirred, thereby dissolving and removing an impurity accumulation layer containing zinc as a main ingredient. |
