| 摘要 |
PURPOSE:To reduce the series resistors in a photovoltaic device having laminated P type an I type amorphous silicon layers by interposing a diffusion preventive layer between the amorphous silicon layers, thereby preventing the production of a high resistance layer. CONSTITUTION:This device has a substrate 1 using amorphous silicon (a-Si), the first transparent electrode film 2 covered on the substrate 1, P tupe, I type and N type (+) a-Si layers 3, 4 and 5 sequentially laminated on the film 2, and the second electrode film 6. A diffusion preventive layer 7 is formed between the layer 3 and the layer 4, thereby preventing a high resistance layer from being fromed in the I type Si layer due to the impurity diffusion from the layer 3 to the layer 4. The layer 7 may employ a light transmission and good conductive thin film made of platinum or cermet with 10-40Angstrom thick, or N type low impurity density a-Si layer. |
