| 摘要 |
PURPOSE:To improve the operating characteristics of a laser by filling a clad layer between an active layer and a guide layer, thereby forming a striped guide layer with good reproducibility and confining the carrier preferably. CONSTITUTION:An n type clad layer 12, an n type active layer 13, a p type active layer 13, a p type clad layer 14, a p type guide layer 15 and a p type clad layer 16 are continuously grown by a liquid epitaxial growth method sequentially on an n type semiconductor substrate 11. At this time the layers 12, 14 have smaller refractive indexes than the layer 15 and larger forbidden band width than that. An SiO2 film is adhered in the striped shaped of 4-6mum in width by a CVD method on the layer 16, and the layers 16, 15 are etched and removed except the striped part. An n type InP layer 17 is so epitaxially grown as to surround the layers 15, 16 thus retained, electrodes 18, 19 are formed, and a reflecting surface is then formed by cleavage. |
