| 摘要 |
PURPOSE:To form a semiconductor element of washed emitter type by forming the base region of a complementary semiconductor element, then forming a polycrystalline silicon film and a resist mask film on the surface, and injecting ions. CONSTITUTION:Base regions 29, 30 are respectively formed in complementary semiconductor elements, polycrystalline silicon film 32 of 100Angstrom thick is convered on the surface, and a PSG film 33 of approx. 1mum thick is covered further thereon. Then, a resist film is patterned by a photographic process to form a resist film mask 34, and the PSG film 33 on the surfaces of the base and emitter contacting electrode windows 35, 36 are removed. Boron ions are injected through the film 32 on both windows 35, 36, while the film 34 is removed, and impurity regions 35', 36' are formed by a heat treatment. |
